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Gate-tunable resonant tunneling in double bilayer graphene heterostructures

Babak Fallahazad1, Kayoung Lee, Sangwoo Kang

  • 1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.

Nano Letters
|December 2, 2014
PubMed

Keywords:
Bilayer grapheneheterostructurehexagonal boron nitridenegative differential resistanceresonant tunnelingtunneling field-effect transistor

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