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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Tunneling Energy and Capacitance of Twist-Controlled Graphene Double Layers Separated by Boron Nitride Barriers

Kenneth A Lin1, Brooke Ramey1, Nitin Prasad1

  • 1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States.

Nano Letters
|December 1, 2025
PubMed

Keywords:
double-layer heterostructuregraphenehexagonal boron nitridenegative differential resistanceresonant tunneling

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