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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Spatially dependent lattice deformations for dislocations at the edges of graphene

Chuncheng Gong1, Kuang He, Alex W Robertson

  • 1Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, United Kingdom.

ACS Nano
|December 16, 2014
PubMed

Keywords:
TEMdefectsdislocationsgrapheneripples

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