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Tunable charge-trap memory based on few-layer MoS2.

Enze Zhang1, Weiyi Wang, Cheng Zhang

  • 1State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.

ACS Nano
|December 16, 2014
PubMed
Summary
This summary is machine-generated.

This study presents a novel charge-trap memory device using molybdenum disulfide (MoS2) and high-κ dielectrics. The device achieves a large memory window and stable retention, paving the way for advanced electronic memory.

Keywords:
MoS2charge-trap memorydual gatememory characteristicsmemory window

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • High-κ dielectric materials are crucial for next-generation charge-trap memory devices.
  • Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), offer unique properties for electronic applications.

Purpose of the Study:

  • To develop and characterize a dual-gate charge-trap memory device utilizing a few-layer MoS2 channel and a 3D Al2O3/HfO2/Al2O3 gate stack.
  • To investigate the memory performance, including memory window, program/erase ratio, endurance, and retention.

Main Methods:

  • Fabrication of a dual-gate memory device with a few-layer MoS2 channel.
  • Integration of a three-dimensional (3D) aluminum oxide (Al2O3)/hafnium oxide (HfO2)/Al2O3 charge-trap gate stack.
  • Electrical characterization of the device's memory properties.

Main Results:

  • The MoS2 memory device demonstrated an exceptional memory window exceeding 20 V due to the trapping capabilities of HfO2.
  • Tunable memory window (15.6–21 V) using a back gate and a high program/erase current ratio (10^4) for multibit storage.
  • Achieved high endurance (hundreds of cycles) and stable retention with only ~28% charge loss after 10 years.

Conclusions:

  • The combination of 2D MoS2 and high-κ charge-trap gate stacks offers a promising approach for advanced nonvolatile memory devices.
  • The developed device exhibits superior performance compared to previously reported MoS2 flash memory.
  • This work opens new avenues for the development of high-performance memory technologies.