Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

2.1K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
2.1K
Electrostatic Boundary Conditions01:16

Electrostatic Boundary Conditions

1.2K
Consider an external electric field propagating through a homogeneous medium. When the electric field crosses the surface boundary of the medium, it undergoes a discontinuity. The electric field can be resolved into normal and tangential components. The amount by which the field changes at any boundary is given by the difference between the field components above and below the surface boundary.
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
1.2K
Non-ohmic Devices00:51

Non-ohmic Devices

1.7K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.7K
Fast Decoupled and DC Powerflow01:24

Fast Decoupled and DC Powerflow

916
The fast decoupled power flow method addresses contingencies in power system operations, such as generator outages or transmission line failures. This method provides quick power flow solutions, essential for real-time system adjustments. Fast decoupled power flow algorithms simplify the Jacobian matrix by neglecting certain elements, leading to two sets of decoupled equations:
916
The Electrical Double Layer01:30

The Electrical Double Layer

210
In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
210
Generation of Three-Phase Voltage01:21

Generation of Three-Phase Voltage

1.0K
A three-phase AC generator has a rotor with a rotating magnet placed within the stator mounted with the stationary three-phase winding to generate three-phase voltages via mutual induction. These windings are evenly distributed around the inner circumference of the stator and are arranged 120 electrical degrees apart. Three-phase stator windings consist of three separate coils or groups of coils, known as phases, each connected in Y (star) configuration or Delta configuration.
As the rotor...
1.0K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Patterns of identity: Lip prints, tongue prints and mandibular canine width as markers for gender determination-A cross-sectional study.

Journal of family medicine and primary care·2024
Same author

Investigation of rank order centroid method for optimal generation control.

Scientific reports·2024
Same author

Enhancing Electrochemical Performance with g-C<sub>3</sub>N<sub>4</sub>/CeO<sub>2</sub> Binary Electrode Material.

Molecules (Basel, Switzerland)·2023
Same author

Ultimate Spin Currents in Commercial Chemical Vapor Deposited Graphene.

ACS nano·2020
Same author

Thermal behavior of spin-current generation in Pt<sub>x</sub>Cu<sub>1-x</sub> devices characterized through spin-torque ferromagnetic resonance.

Scientific reports·2020
Same author

Author Correction: High velocity domain wall propagation using voltage controlled magnetic anisotropy.

Scientific reports·2019

Related Experiment Video

Updated: Apr 19, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.6K

All-electrical deterministic single domain wall generation for on-chip applications.

Chinkhanlun Guite1, I S Kerk1, M Chandra Sekhar1

  • 1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.

Scientific Reports
|December 16, 2014
PubMed
Summary
This summary is machine-generated.

Researchers developed a deterministic method for generating single magnetic domain walls (DWs) in ferromagnetic nanowires. This approach avoids external fields and long pulses, paving the way for reliable DW-based devices.

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.7K
Generation of Dynamical Environmental Conditions using a High-Throughput Microfluidic Device
14:48

Generation of Dynamical Environmental Conditions using a High-Throughput Microfluidic Device

Published on: April 17, 2021

4.7K

Related Experiment Videos

Last Updated: Apr 19, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.7K
Generation of Dynamical Environmental Conditions using a High-Throughput Microfluidic Device
14:48

Generation of Dynamical Environmental Conditions using a High-Throughput Microfluidic Device

Published on: April 17, 2021

4.7K

Area of Science:

  • Spintronics
  • Materials Science
  • Nanotechnology

Background:

  • Domain wall (DW) generation and dynamics are crucial for DW-based non-volatile logic and magnetic memory devices.
  • Stochastic DW generation hinders the realization of reliable DW-based devices.
  • Conventional methods for stabilizing Néel DWs require long current pulses and external magnetic fields.

Purpose of the Study:

  • To demonstrate a method for deterministic single DW generation.
  • To eliminate the need for long pulse durations and external magnetic fields for DW stabilization.
  • To advance DW device technology towards practical on-chip applications.

Main Methods:

  • Controlling stray field magnetostatic interaction between a current-carrying strip line and a nanowire edge.
  • Utilizing the natural edge-field assisted DW generation process.
  • Investigating DW generation without external magnetic field assistance.

Main Results:

  • Achieved deterministic single DW production without compromising pulse duration.
  • Demonstrated that no external field is required for DW stabilization.
  • The edge-field assisted process is twice as fast as conventional methods.
  • Requires lower current density compared to conventional techniques.

Conclusions:

  • A novel method for deterministic DW generation has been successfully demonstrated.
  • This technique overcomes the stochastic nature of conventional DW generation.
  • The findings represent a significant step towards the on-chip application of DW device technology.