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Updated: Apr 19, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Preparation of Ta-O-based tunnel junctions to obtain artificial synapses based on memristive switching
Stefan Niehörster1, Andy Thomas
1Thin films and Physics of Nanostructures, Physics Department, Bielefeld University, Bielefeld, Germany.
Abstract:
Magnetron sputtering and optical lithography are standard techniques to prepare magnetic tunnel junctions with lateral dimensions in the micrometer range. Here we present the materials and techniques to deposit the layer stacks, define the structures, and etch the devices. In the end, we obtain tunnel junction devices exhibiting memristive switching for potential use as artificial synapses.
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