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Anisotropic magnetoresistance in altermagnetic MnTe
Ruben Dario Gonzalez Betancourt1,2,3, Jan Zubáč1,3, Kevin Geishendorf1
1Institute of Physics ASCR, v.v.i., Prague, Czechia.
Npj Spintronics
|August 16, 2024
Summary
This study investigates manganese telluride (MnTe), an altermagnetic material. Researchers explored how magnetic fields affect its electrical resistivity, revealing anisotropic magnetoresistance linked to crystal and magnetic order.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Manganese telluride (MnTe) is identified as an altermagnetic material.
- Altermagnetism in MnTe leads to spin-polarized bands and anomalous transport effects, including the anomalous Hall effect.
- MnTe exhibits various magnetoresistance effects beyond those directly from altermagnetism.
Purpose of the Study:
- To investigate the manipulation of magnetic order in MnTe using applied magnetic fields.
- To understand the impact of magnetic field-induced order changes on electrical resistivity.
- To identify and analyze the components of anisotropic magnetoresistance when magnetic order is rotated within the hexagonal basal plane.
Main Methods:
- Experimental measurements of electrical resistivity under applied magnetic fields.
- Rotation of the magnetic order within the hexagonal basal plane.
- Symmetry analysis of magnetotransport components.
Main Results:
- Experimental results confirm the presence of anisotropic magnetoresistance (AMR).
- AMR is found to be dependent on the relative orientation of current, crystal lattice, and magnetic order.
- A three-fold component in transverse magnetoresistance, attributed to the anomalous Hall effect, demonstrates altermagnetism.
Conclusions:
- The study establishes the presence of specific anisotropic magnetoresistance components in MnTe.
- The findings link anisotropic magnetoresistance to the interplay between crystal structure, magnetic order, and current direction.
- Altermagnetism in MnTe is evidenced by a distinct three-fold contribution to transverse magnetoresistance.
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