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Revisit the spin-FET: multiple reflection, inelastic scattering, and lateral size effects.
Luting Xu1, Xin-Qi Li1, Qing-feng Sun2
1Department of Physics, Beijing Normal University, Beijing 100875, China.
Scientific Reports
|December 18, 2014
Summary
This study improves the spin-injected field effect transistor (spin-FET) model using a lattice Green's function approach. Simulations reveal key differences from existing models and highlight the importance of inelastic scattering and confinement for spin control.
Area of Science:
- Condensed Matter Physics
- Spintronics
- Materials Science
Background:
- The spin-injected field effect transistor (spin-FET) is a key device for spintronics.
- Existing models like the Datta-Das model provide a foundation but require refinement.
Purpose of the Study:
- To revisit and improve the spin-FET model using a recursive lattice Green's function approach.
- To investigate the impact of inelastic scattering and lateral confinement on spin control within spin-FETs.
Main Methods:
- Application of the recursive lattice Green's function approach.
- Simulations in the coherent regime for one-dimensional spin-FETs.
Main Results:
- Identified significant differences between the new model and the celebrated Datta-Das model.
- Developed an improved treatment with generalized results for spin-FETs.
- Demonstrated the influence of inelastic scattering and lateral confinement on spin manipulation.
Conclusions:
- The recursive lattice Green's function approach offers a more refined understanding of spin-FET behavior.
- Inelastic scattering and lateral confinement are critical factors for effective spin control in spin-FET devices.
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