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X-ray diffraction strain analysis of a single axial InAs 1-x Px nanowire segment
Mario Keplinger1, Bernhard Mandl1, Dominik Kriegner1
1Solid State and Semiconductor Physics, Johannes Kepler University Linz, A-4040 Linz, Austria.
Abstract:
The spatial strain distribution in and around a single axial InAs 1-x Px hetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-segment's dimensions affect the strain in its core region and in the region close to the nanowire's side facets. Moreover, ensemble-averaging high-resolution diffraction experiments were used to determine statistical information on the distribution of wurtzite and zinc-blende crystal polytypes in the nanowires.
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