Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

1.2K
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
1.2K
MOSFET01:16

MOSFET

1.8K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.8K
MOS Capacitor01:25

MOS Capacitor

1.9K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.9K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

2.0K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
2.0K
MOSFET Amplifiers01:17

MOSFET Amplifiers

731
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
731

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Experiment Control and Monitoring System for LOG-a-TEC Testbed.

Sensors (Basel, Switzerland)·2021
Same author

Creation of Numerical Constants in Robust Gene Expression Programming.

Entropy (Basel, Switzerland)·2020
Same journal

Opportunities and Challenges of Integrating Ethiopian Traditional Medicine System Into Modern Medicine: A Narrative Review.

TheScientificWorldJournal·2026
Same journal

Exploring the Antiparasitic Activity of the Sea Cucumber Isostichopus sp. aff. badionotus From the Northern Coast of Colombia Against Trypanosoma cruzi.

TheScientificWorldJournal·2026
Same journal

Kalanchoe ceratophylla (Crassulaceae): The True Identity of Sidingin, a Medicinal Plant From Sumatra, Based on Morphological and Molecular Evidence.

TheScientificWorldJournal·2026
Same journal

Genetic Variation of Chicken Growth Differentiation Factor-9 Gene and Association With Egg Characteristics: A Systematic Review.

TheScientificWorldJournal·2026
Same journal

Applied Research on the Effect of Risks on Public Health Building Projects' Performance: Empirical Results From Tanzania.

TheScientificWorldJournal·2026
Same journal

Projected Impacts of Climate and Land Use/Land Cover Change on Sediment Yield and Surface Runoff in the Baro River Sub-Basin, Ethiopia.

TheScientificWorldJournal·2026
See all related articles

Related Experiment Video

Updated: Apr 19, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.8K

Break-before-make CMOS inverter for power-efficient delay implementation.

Janez Puhan1, Dušan Raič1, Tadej Tuma1

  • 1Faculty of Electrical Engineering, University of Ljubljana, Tržaška 25, 1000 Ljubljana, Slovenia.

Thescientificworldjournal
|December 25, 2014
PubMed
Summary
This summary is machine-generated.

This study introduces a modified CMOS inverter that reduces short-circuit current and power consumption. The novel design improves energy efficiency by up to 40% for applications requiring slower operation.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.6K
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

6.2K

Related Experiment Videos

Last Updated: Apr 19, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.8K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.6K
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
15:58

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

Published on: December 3, 2013

6.2K

Area of Science:

  • Electrical Engineering
  • Computer Engineering
  • Microelectronics

Background:

  • Static CMOS inverters suffer from short-circuit current, leading to power overhead, especially when slower operation is required.
  • Minimizing short-circuit current is crucial for enhancing power efficiency in digital circuits.
  • Existing designs may not adequately address power reduction for specific operational speeds.

Purpose of the Study:

  • To propose a modified static CMOS inverter design that effectively reduces short-circuit current.
  • To enhance energy efficiency and reduce power overhead in circuits demanding slower operation.
  • To introduce a novel bidirectional delay element for improved dynamic response and reduced direct-path current.

Main Methods:

  • A modified static CMOS inverter incorporating a bidirectional delay element in series with switching transistors was designed.
  • Circuit simulations were performed to characterize various delay element implementations.
  • A global optimization procedure was employed for power-efficient transistor sizing.
  • The modified inverter chain's performance was compared against standard implementations across different delay settings.

Main Results:

  • The proposed modified CMOS inverter significantly reduces short-circuit current by ensuring switching transistors are never simultaneously ON.
  • Circuit simulations verified the effectiveness of the bidirectional delay element in managing dynamic response.
  • Transistor sizing optimization resulted in power-efficient configurations.
  • The modified inverter chain demonstrated up to a 40% reduction in energy (charge) per delay compared to standard designs.

Conclusions:

  • The modified static CMOS inverter with a bidirectional delay element offers a viable solution for reducing short-circuit current and power consumption.
  • This design is particularly beneficial for applications requiring controlled, slower operational speeds.
  • The proposed approach enables significant energy savings and is demonstrated through practical implementations like low-power delay lines and leading-edge detector cells.