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Updated: Apr 19, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
M Klinger1, M Němec1, L Polívka1
1Laboratory of nanostructures and nanomaterials, Institute of Physics of the ASCR, Na Slovance 2, 182 21 Prague 8, Czech Republic.
An automated tool estimates transmission electron microscopy (TEM) sample thickness using convergent beam electron diffraction (CBED) patterns. This method accurately determines thickness by comparing experimental data with simulated patterns.
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