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Van der Waals Interactions01:24

Van der Waals Interactions

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Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
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The ideal gas law is an approximation that works well at high temperatures and low pressures. The van der Waals equation of state (named after the Dutch physicist Johannes van der Waals, 1837−1923) improves it by considering two factors.
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The ideal gas law is based on two simplifying assumptions: first, that there are no intermolecular attractions between gas molecules, and second, that the volume occupied by the molecules themselves is negligible compared with the volume of the container. However, these assumptions don't hold up under all conditions - specifically, at high pressures and low temperatures, as gas tends to deviate from ideal gas behavior.The van der Waals equation is an enhanced version of the ideal gas law,...
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Valence shell electron-pair repulsion theory (VSEPR theory) enables us to predict the molecular structure around a central atom from an examination of the number of bonds and lone electron pairs in its Lewis structure. The VSEPR model assumes that electron pairs in the valence shell of a central atom will adopt an arrangement that minimizes repulsions between these electron pairs by maximizing the distance between them. The electrons in the valence shell of a central atom form either bonding...
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Ripplocations in van der Waals layers.

Akihiro Kushima1, Xiaofeng Qian, Peng Zhao

  • 1Department of Nuclear Science and Engineering and ‡Department of Materials Science and Engineering, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.

Nano Letters
|January 7, 2015
PubMed
Summary

Researchers discovered "ripplocations," a new type of defect in van der Waals (vdW) layers. Unlike conventional dislocations, these defects attract, impacting the processing of vdW materials.

Keywords:
2D layered crystalsMoS2dislocationripplevan der Waals homostructures

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Crystallography

Background:

  • Topological line defects known as dislocations govern crystal properties.
  • Frank's rule predicts repulsion between same-sign dislocations based on their Burgers vectors.
  • Van der Waals (vdW) layers exhibit unique behaviors due to weak interlayer adhesion and flexibility.

Purpose of the Study:

  • To identify and characterize novel line defects in van der Waals layers.
  • To investigate the behavior of these defects and their deviation from conventional dislocation rules.
  • To understand the implications of these defects for materials processing and engineering.

Main Methods:

  • Theoretical analysis of defect energy and interactions in vdW materials.
  • In situ transmission electron microscopy (TEM) to observe defect dynamics.
  • Mechanical and chemical processing (litiation) of few-layer MoS2 films.

Main Results:

  • A new class of line defects, termed "ripplocations," was identified in vdW layers.
  • Ripplocations possess crystallographic Burgers vectors but exhibit "surface ripples."
  • Contrary to Frank's rule, same-sign ripplocations attract and merge due to sublinear self-energy scaling.
  • Direct observation of ripplocation generation and motion in MoS2 films.

Conclusions:

  • Ripplocations represent a new subclass of elementary defects in 2D materials.
  • Their attractive nature challenges conventional understanding of dislocation interactions.
  • Ripplocations are significant for defect engineering and processing of van der Waals materials.