Electrochemical Systems
Metal-Semiconductor Junctions
The Electrical Double Layer
Theory of Metallic Conduction
Resistivity
Biasing of Metal-Semiconductor Junctions
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Apr 18, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Yeonbae Lee1, Z Q Liu2, J T Heron3
1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
Giant electroresistance (GER) was observed in iron-rhodium (FeRh) films due to electric-field-induced phase transitions. This effect arises from strain-mediated changes in coexisting magnetic phases, offering new avenues for electronic device applications.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: