Related Experiment Video
Updated: Apr 18, 2026
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
16.3K
Modification of graphene/SiO2 interface by UV-irradiation: effect on electrical characteristics
1Department of Complexity Science and Engineering, The University of Tokyo , Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8561, Japan.
ACS Applied Materials & Interfaces
|January 9, 2015
Summary
Ultraviolet (UV) irradiation damages graphene field-effect transistors (FETs), reducing mobility and causing hysteresis. Annealing restores performance by removing UV-induced defects at the graphene/SiO2 interface.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Graphene is a key material for advanced electronics.
- The impact of UV irradiation on graphene devices is not fully understood.
- Field-effect transistors (FETs) are crucial for electronic applications.
Purpose of the Study:
- To investigate UV-induced changes in graphene/SiO2 FET characteristics.
- To understand defect formation and recovery mechanisms.
- To provide insights for practical graphene electronics.
Main Methods:
- Fabrication and characterization of graphene/SiO2 FETs.
- Exposure to UV irradiation in a vacuum.
- Annealing experiments at 160 °C in a vacuum.
- Analysis using Raman spectroscopy.
Main Results:
- UV irradiation decreased carrier mobility and introduced hysteresis in FET transfer characteristics.
- Annealing eliminated hysteresis and partially recovered mobility.
- Raman spectra showed UV-induced D band (defects), which annealing removed.
- A model proposed photochemical reactions creating interface defects.
Conclusions:
- UV irradiation creates defects at the graphene/SiO2 interface, impacting FET performance.
- Annealing effectively repairs these UV-induced defects.
- Understanding these effects is crucial for reliable graphene-based electronic devices.
