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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid
Jaewoo Jeong1, Nagaphani B Aetukuri1, Donata Passarello2
1International Business Machines Almaden Research Center, San Jose, CA 95120;
Ionic liquid gating induces giant, reversible structural expansion in vanadium dioxide (VO2) films, causing metallization. These changes depend on the VO2 crystal facet and oxygen ion mobility.
Area of Science:
- Condensed matter physics
- Materials science
- Oxide electronics
Background:
- Correlated electron oxides exhibit unique electrical properties.
- Vanadium dioxide (VO2) shows a temperature-driven insulator-to-metal transition near room temperature.
- Ionic liquid gating can induce metallization in VO2 thin films.
Purpose of the Study:
- Investigate the structural changes accompanying ionic liquid gating-induced metallization in VO2.
- Understand the mechanism and reversibility of these structural transformations.
- Determine the influence of crystal facet on the gating effect.
Main Methods:
- In situ synchrotron X-ray diffraction
- In situ synchrotron X-ray absorption spectroscopy
- Ionic liquid gating of epitaxial VO2 thin films
Main Results:
- Ionic liquid gating causes a giant lattice expansion (up to ~3%) in VO2 films, significantly larger than thermal metallization (~0.3%).
- These large-scale structural changes are fully reversible upon gating reversal.
- The observed metallization and structural changes are strongly dependent on the VO2 crystal facet, linked to oxygen ion mobility.
Conclusions:
- Electric-field-induced structural changes play a crucial role in the metallization of VO2.
- Oxygen ion motion along specific crystallographic directions facilitates these reversible transformations.
- This work provides insights into the mechanism of ionic liquid gating in correlated oxides and its potential for device applications.
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