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Segregation of In to dislocations in InGaN
Matthew K Horton1, Sneha Rhode, Suman-Lata Sahonta
1Department of Materials, Imperial College London , Exhibition Road, London SW7 2AZ, United Kingdom.
Abstract:
Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa(1-x)N alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.
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