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Illumination source optimization in optical lithography via derivative-free optimization.

Wen Lv, Shiyuan Liu, Xiaofei Wu

    Journal of the Optical Society of America. A, Optics, Image Science, and Vision
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    Summary
    This summary is machine-generated.

    This study introduces a new method for illumination source optimization (SO) in optical lithography, improving accuracy for subwavelength features by using a rigorous simulation model and derivative-free optimization (DFO). This approach overcomes limitations of previous models for advanced lithography applications.

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    Area of Science:

    • Optical lithography
    • Computational physics
    • Semiconductor manufacturing

    Background:

    • Traditional illumination source optimization (SO) models in optical lithography often neglect critical physical effects like light's vectorial nature and mask topography.
    • These simplified models lead to inaccurate predictions, especially for large numerical apertures and subwavelength critical dimensions, rendering prior research unreliable.
    • Accurate modeling is crucial for advancing semiconductor fabrication processes.

    Purpose of the Study:

    • To develop a more accurate method for illumination source optimization (SO) in optical lithography.
    • To address the inaccuracies of conventional simulation models in predicting SO for advanced lithography scenarios.
    • To enable precise control over light patterns for fabricating smaller and more complex semiconductor devices.

    Main Methods:

    • Proposed a novel source pattern representation method offering moderate parameter variations while maintaining completeness within the solution space.
    • Developed a derivative-free optimization (DFO) technique to optimize source pattern parameters.
    • Utilized a rigorous simulation model that accounts for the vectorial nature of light and mask topography, unlike traditional methods.

    Main Results:

    • The new source pattern representation provides a comprehensive yet manageable parameter set for optimization.
    • The derivative-free optimization (DFO) method successfully optimized source parameters using the rigorous model.
    • The developed approach enhances the accuracy of illumination source optimization for critical dimensions approaching subwavelength scales.

    Conclusions:

    • The combination of a new source pattern representation and derivative-free optimization (DFO) under a rigorous model significantly improves the accuracy of illumination source optimization (SO) in optical lithography.
    • This work provides a more reliable computational framework for designing illumination sources, essential for next-generation semiconductor manufacturing.
    • The proposed methods overcome the limitations of traditional models, paving the way for more precise lithographic patterning.