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Related Experiment Video

Updated: Apr 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

The E1-E2 center in gallium arsenide is the divacancy.

Peter A Schultz¹

¹Multiscale Science, Sandia National Laboratories, Albuquerque, NM 87185-1322, USA.

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|January 31, 2015

Summary

The E1-E2 center in irradiated gallium arsenide (GaAs) is not an isolated arsenic vacancy, but likely a divacancy. This research reassigns the arsenic monovacancy to the E3 center, resolving experimental discrepancies.

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Last Updated: Apr 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Published on: July 17, 2020

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Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

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Published on: December 3, 2013

Area of Science:

Semiconductor Physics
Materials Science
Computational Materials Science

Background:

Irradiated gallium arsenide (GaAs) exhibits complex defect structures.
The E1-E2 and E3 centers are experimentally observed defects in irradiated GaAs.
Previous assignments of these defect centers have led to conflicting interpretations.

Purpose of the Study:

To identify the atomic structure responsible for the E1-E2 and E3 defect energy levels in irradiated GaAs.
To resolve contradictions in experimental observations regarding GaAs defect centers.
To provide accurate assignments for intrinsic point defects in irradiated GaAs.

Main Methods:

First-principles calculations were employed to compute defect energy levels.
Theoretical modeling was used to simulate intrinsic point defects in GaAs.
Comparison of computed energy levels with experimental data for defect identification.

Main Results:

The E1-E2 center in irradiated GaAs is definitively not an isolated arsenic vacancy.
The divacancy is identified as the most probable intrinsic defect matching the E1 and E2 energy levels.
The arsenic monovacancy is reassigned to the E3 center in irradiated GaAs.

Conclusions:

The divacancy is the correct assignment for the E1-E2 center in irradiated GaAs.
The arsenic monovacancy is reassigned to the E3 center, reconciling experimental data.
These revised defect assignments provide a consistent framework for understanding irradiated GaAs.