Fracto-mechanoluminescence induced by impulsive deformation of II-VI semiconductors

When II-VI semiconductors are fractured, initially the mechanoluminescence (ML) intensity increases with time, attains a maximum value Im at a time tm, at which the fracture is completed. After tm, the ML intensity decreases with time, Im increase linearly with the impact velocity v0 and IT initially increase linearly with v0 and then it attains a saturation value for a higher value of v0. For photoluminescence, the temperature dependence comes mainly from luminescence efficiency, ηo; however, for the ML excitation, there is an additional factor, rt dependent on temperature. During fracture, charged dislocations moving near the tip of moving cracks produce intense electric field, causes band bending. Consequently, tunneling of electrons from filled electron traps to the conduction band takes place, whereby the radiative electron-hole recombination give rise to the luminescence. In the proposed mechanism, expressions are derived for the rise, the time tm corresponding to the ML intensity versus time curve, the ML intensity Im corresponding to the peak of ML intensity versus time curve, the total fracto-mechanoluminescence (FML) intensity IT, and fast and slow decay of FML intensity of II-VI semiconductors. The FML plays a significant role in understanding the processes involved in biological detection, earthquake lights and mine failure.