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Electric control of spin injection into a ferroelectric semiconductor
Xiaohui Liu1, J D Burton1, M Ye Zhuravlev2
1Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA.
Physical Review Letters
|February 14, 2015
Summary
Researchers explored electric-field control of spin polarization in materials. They found ferroelectric polarization reversal significantly altered spin injection in semiconductor devices, offering a nonvolatile spintronics mechanism.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Electric-field control of spin properties is crucial for advanced device functionalities.
- Utilizing ferroelectric polarization offers a method to tune carrier spin polarization in semiconductors.
Purpose of the Study:
- To investigate the impact of ferroelectric polarization in electron-doped barium titanate (n-BaTiO3) on spin-polarized transport.
- To explore the modulation of spin polarization at the strontium ruthenate/n-BaTiO3 interface.
Main Methods:
- First-principles density-functional calculations were employed to model the interface.
- Analytical model calculations were used to generalize the findings.
Main Results:
- The SrRuO3/n-BaTiO3(001) interface exhibits negative spin polarization.
- Ferroelectric polarization reversal shifted spin polarization from -65% to -98%.
Conclusions:
- Ferroelectric modulation offers a general, nonvolatile mechanism for electrical control of spin injection.
- This effect is applicable to ferromagnetic-metal-ferroelectric-semiconductor systems for spintronics applications.
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