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Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors
Guihuan Chen1, Yongqiang Yu1,2, Kun Zheng2
1Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion, Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China (USTC), Hefei, Anhui, 230026, P.R. China.
Abstract:
Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.
