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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends

Xinge Yu1, Li Zeng, Nanjia Zhou

  • 1Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.

Advanced Materials (Deerfield Beach, Fla.)
|February 26, 2015
PubMed

Keywords:
flexible materialsindium oxidepolymer blendsthin-film transistorstransparent electronics

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