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Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth
Bernhard Loitsch1, Daniel Rudolph, Stefanie Morkötter
1Walter Schottky Institut, Physik Department and Nanosystems Initiative Munich, TU München, Am Coulombwall 4, 85748, Garching, Germany.
Advanced Materials (Deerfield Beach, Fla.)
|March 3, 2015
Abstract:
A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub-10 nm regime. While this scheme preserves the bulk-like crystal properties, correlated optical experiments reveal huge blueshifted photo-luminescence (up to ≈100 meV) with decreasing nanowire cross-section, demonstrating very strong quantum confinement effects.
