Related Experiment Video
Updated: Apr 16, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Weak antilocalization effect of topological crystalline insulator Pb(1-x)Sn(x)Te nanowires with tunable composition
Muhammad Safdar1, Qisheng Wang1, Zhenxing Wang1
1National Center for Nanoscience and Technology, Beijing 100190, China.
Abstract:
Pb(1-x)Sn(x)Te is a unique topological crystalline insulator (TCI) that undergoes a topological phase transition from topological trivial insulator to TCI with the change of Sn content and temperature. Meanwhile, the surface states properties of Pb(1-x)Sn(x)Te are strongly dependent on crystallographic plane orientation. In this work, we first reported controllable synthesis of rectangular prismatic Pb(x)Sn(1-x)Te nanowires by vapor deposition method. Rectangular prismatic Pb(x)Sn(1-x)Te nanowires exhibits distinct {100} surfaces. Furthermore, The Sn composition of Pb(1-x)Sn(x)Te nanowires can be continuously controlled from 0 to 1. Low temperature magnetotransport shows that PbTe nanowire exhibits weak localization (WL) effect, whereas Pb0.5Sn0.5Te and Pb0.2Sn0.8Te nanowires display pronounced weak antilocalization (WAL) effect. This transition is explained by the topological phase transform of Pb(1-x)Sn(x)Te from trivial to nontrivial insulator with Sn content (x) exceeding 0.38. Pb(x)Sn(1-x)Te nanowires synthesized in this work lay a foundation for probing spin-correlated electron transport and show great potentials for future applications of tunable spintronic devices.
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects

