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A new systematic framework for crystallographic analysis of atom probe data.

Vicente J Araullo-Peters1, Andrew Breen1, Anna V Ceguerra1

  • 1Australian Centre for Microscopy and Microanalysis, University of Sydney, Australia; School of Aerospace, Mechanical and Mechatronic Engineering, University of Sydney, Australia.

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New methods, plane orientation extraction (POE) and local crystallography mapping (LCM), accurately identify crystal planes in atom probe data. These techniques work even with challenging laser-assisted datasets, revealing atomic plane characteristics.

Keywords:
Atom probe tomographyCrystallography

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Area of Science:

  • Materials Science
  • Crystallography
  • Analytical Chemistry

Background:

  • Atom probe tomography (APT) is a powerful technique for nanoscale chemical analysis.
  • Extracting detailed crystallographic information from APT data remains challenging, especially under complex acquisition conditions.

Purpose of the Study:

  • To introduce novel, robust methods for unambiguous determination of crystal planes in atom probe datasets.
  • To characterize the location, orientation, and interplanar spacing of atomic planes.
  • To validate these methods across various materials and APT acquisition modes.

Main Methods:

  • Development and application of plane orientation extraction (POE) for identifying crystal planes.
  • Implementation of local crystallography mapping (LCM) for detailed crystallographic analysis.
  • Utilizing real-space APT data for systematic crystallographic investigations.

Main Results:

  • Successful identification and characterization of crystal planes in pure Al, aluminum alloys, and doped silicon.
  • Demonstrated efficacy of POE and LCM in both DC voltage and laser-assisted APT modes.
  • Analysis revealed the nature of atomic planes, highlighting method robustness under challenging conditions.

Conclusions:

  • POE and LCM provide reliable and systematic approaches for crystallographic analysis in APT.
  • These methods enhance the utility of APT for understanding material microstructures at the atomic level.
  • The techniques are applicable to a range of materials and APT data acquisition parameters.