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Surface Properties of Synthesized Nanoporous Carbon and Silica Matrices
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Silicene nanomesh.

Feng Pan1, Yangyang Wang2, Kaili Jiang2

  • 11] Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi'an 710072, P. R. China [2] School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723001, P. R. China.

Scientific Reports
|March 14, 2015
PubMed
Summary
This summary is machine-generated.

Researchers opened a band gap in silicene nanomesh (SNM) by controlling wall width, enabling potential nanoelectronic applications. However, performance of silicene nanomesh transistors degrades significantly at room temperature.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanoscience

Background:

  • Silicene exhibits high carrier mobility but a zero band gap, limiting its use in nanoelectronics.
  • Graphene shares similar limitations due to its zero band gap.

Purpose of the Study:

  • To investigate methods for opening a band gap in silicene.
  • To explore the potential of silicene nanomesh (SNM) for nanoelectronic applications.

Main Methods:

  • First-principles calculations were employed to study silicene nanomesh structures.
  • Quantum transport simulations were used to analyze the performance of SNM field-effect transistors.

Main Results:

  • A tunable band gap was successfully opened in silicene nanomesh by controlling the width (W) of the walls between holes.
  • The band gap size correlates with the wall width and the ratio of removed to total silicon atoms.
  • Sub-10 nm single-gated SNM transistors demonstrated excellent performance at 0 K but degraded significantly at room temperature.

Conclusions:

  • Silicene nanomesh presents a viable strategy for engineering a band gap in silicene.
  • The temperature-dependent performance degradation is a critical challenge for practical room-temperature nanoelectronic applications of SNM.