Enhanced sensitivity of double gate junctionless transistor architecture for biosensing applications

Area of Science:

• Semiconductor device physics
• Nanotechnology
• Biosensors

Background:

• Field-effect transistors (FETs) are widely used in electronic devices.
• Detecting biomolecules requires high-sensitivity sensor technology.
• Junctionless (JL) transistor architectures offer potential advantages in device scaling and performance.

Purpose of the Study:

• To investigate the potential of double gate junctionless (JL) architecture for enhanced biomolecule detection.
• To evaluate the sensing performance of JL FETs in a cavity-based dielectric modulation setup.
• To compare the sensitivity of asymmetric versus symmetric gate operations.

Main Methods:

• Fabrication and characterization of double gate junctionless (JL) FETs.
• Utilizing cavity modulation for dielectric sensing of biomolecules.
• Analyzing device performance under asymmetric and symmetric gate bias conditions.
• Evaluating sensitivity based on threshold voltage shift and drain current ratios.

Main Results:

• Asymmetric gate operation in JL FETs significantly enhances the sensing margin, achieving nearly five times higher sensitivity compared to symmetric operation.
• The device demonstrates high detection sensitivity even with a partially filled sensing cavity.
• Threshold voltage shift and drain current modulation effectively quantify biomolecule presence.

Conclusions:

• The double gate junctionless (JL) architecture is a promising platform for developing highly sensitive cavity-based dielectric modulated FET biosensors.
• Asymmetric gate operation is key to maximizing the sensing capabilities of JL FETs for biomolecule detection.
• This approach offers a pathway for improved diagnostic tools and point-of-care applications.