Related Experiment Video
Updated: Apr 16, 2026

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
Published on: October 5, 2013
Tailoring surface phase transition and magnetic behaviors in BiFeO3 via doping engineering
Feng Yan1, Guozhong Xing2, Rongming Wang2
1School of Engineering and Applied Sciences, Harvard University, Cambridge, MA. 02138, USA.
Abstract:
The charge-spin interactions in multiferroic materials (e.g., BiFeO3) have attracted enormous attention due to their high potential for next generation information electronics. However, the weak and deficient manipulation of charge-spin coupling notoriously limits their commercial applications. To tailor the spontaneous charge and the spin orientation synergistically in BiFeO3 (BFO), in this report, the 3d element of Mn doping engineering is employed and unveils the variation of surface phase transition and magnetic behaviors by introducing chemical strain. The spontaneous ferroelectric response and the corresponding domain structures, magnetic behaviors and spin dynamics in Mn-doped BFO ceramics have been investigated systematically. Both the surface phase transition and magnetization were enhanced in BFO via Mn doping. The interaction between the spontaneous polarization charge and magnetic spin reorientation in Mn-doped BFO are discussed in detail. Moreover, our extensive electron paramagnetic resonance (EPR) results demonstrate that the 3d dopant plays a paramount role in the surface phase transition, which provides an alternative route to tune the charge-spin interactions in multiferroic materials.
More Related Videos
06:49Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
Published on: April 12, 2019
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Related Concept Videos
Ferromagnetism
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...