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Updated: Apr 16, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers
Greta Radaelli1, Diego Gutiérrez, Florencio Sánchez
1Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain; LNESS-Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100, Como, Italy.
Abstract:
Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.
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