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Updated: Apr 16, 2026

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
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Spatially resolved resonant tunneling on single atoms in silicon
1Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South Wales, Sydney, NSW 2052, Australia.
Summary
Researchers precisely controlled single dopants in silicon using scanning tunneling microscopy. This advances quantum computing by revealing dopant properties near interfaces and under electric fields.
Area of Science:
- Quantum computing
- Atomic-scale physics
- Solid-state device physics
Background:
- Controlling single dopants is crucial for quantum computation.
- Understanding dopant properties near interfaces and electric fields is essential for device stability.
- High-resolution energy and spatial characterization of dopants are needed.
Purpose of the Study:
- To investigate the atomic-scale properties of single dopants in silicon.
- To explore the impact of interfaces and electric fields on dopant behavior.
- To establish a framework for analyzing dopant-based quantum systems.
Main Methods:
- Transport measurements on single donors in silicon using a scanning tunneling microscope (STM).
- Operation in the single electron tunneling regime near a vacuum interface.
- Analysis of resonant peaks and thermal broadening for energy scale determination.
- Utilizing a rate equations model to analyze current with excited states.
Main Results:
- Achieved precise spatial and energetic resolution of single dopant properties.
- Determined absolute energy scales and donor charging energies.
- Demonstrated the influence of STM tip electrostatics on dopant behavior.
- Highlighted the benefits of tunable vacuum tunnel rates for future experiments.
Conclusions:
- Developed a versatile experimental framework for atomic-scale investigation of dopant-based systems.
- Provided insights into dopant behavior crucial for advancing quantum computation.
- Showcased the potential of STM for precise control and characterization of quantum devices.

