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Updated: Apr 16, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Single atom devices by ion implantation.

Jessica van Donkelaar¹, C Yang, A D C Alves

¹Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010, Australia.

Journal of Physics. Condensed Matter : an Institute of Physics Journal

|March 19, 2015

Summary

This summary is machine-generated.

Deterministic ion implantation using ion beam induced charge offers improved precision for fabricating single-donor quantum devices. This method enables non-Poisson ion distributions and higher accuracy for future large-scale semiconductor applications.

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Area of Science:

Semiconductor device fabrication
Quantum computing
Materials science

Background:

Deterministic fabrication is crucial for exploiting quantum states of single donors in semiconductor devices.
Ion implantation is a standard semiconductor fabrication tool, but its precision is limited by ion straggling.
Existing post-implantation techniques for locating atoms are insufficient for large-scale devices.

Purpose of the Study:

To develop a deterministic ion implantation method for precise atom placement in semiconductor devices.
To investigate the use of ion beam induced charge for non-Poisson ion distributions.
To enhance implantation precision using on-chip detectors with internal charge gain.

Main Methods:

Utilizing ion beam induced charge for deterministic ion implantation of phosphorus (P) donor atoms in silicon.
Employing on-chip detectors with internal charge gain for enhanced precision.
Analyzing pulse height spectra for 14 keV P ion impacts.

Main Results:

Demonstrated deterministic ion implantation of 14 keV P donor atoms in silicon.
Achieved a non-Poisson distribution of implanted ions.
Observed an internal gain of 3 in a silicon device for 14 keV P ion impact.
Showcased potential for deterministic implantation of sub-14 keV P ions with reduced straggling.

Conclusions:

Ion beam induced charge is a viable method for deterministic ion implantation.
On-chip detectors with internal charge gain significantly improve implantation precision.
This technique paves the way for fabricating advanced, large-scale quantum semiconductor devices.