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Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
J T Muhonen1, A Laucht, S Simmons
1Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Australia, Sydney, NSW 2052, Australia.
Summary
We achieved high quantum gate fidelities for electron and nuclear spins in silicon, exceeding error correction thresholds. This demonstrates the potential of phosphorus donor qubits for scalable quantum computing.
Area of Science:
- Quantum computing
- Solid-state physics
- Atomic physics
Background:
- Coherent control and single-shot readout of individual phosphorus-31 (31P) atoms in silicon have been demonstrated.
- Donor-based quantum computing in silicon offers a promising platform for scalable quantum information processing.
Purpose of the Study:
- To systematically estimate quantum gate fidelities for electron and nuclear spins of single phosphorus donors in silicon.
- To assess the performance of 1-qubit gates within the Clifford group using randomized benchmarking.
Main Methods:
- Application of randomized benchmarking to measure 1-qubit gate fidelities.
- Utilizing isotopically purified silicon-28 (28Si) for single phosphorus (P) donors.
- Analysis of electron and ionized (31)P nucleus spins as qubits.
Main Results:
- Achieved average gate fidelities of 99.95% for the electron spin and 99.99% for the nuclear spin.
- Gate fidelities surpass established quantum error correction thresholds.
- Identified external hardware limitations, rather than intrinsic qubit behavior, as the primary factor limiting gate fidelity.
Conclusions:
- The high gate fidelities demonstrate the significant potential of donor-based quantum computing in silicon.
- The results suggest that improvements in external control hardware are key to further enhancing qubit performance.
- This work provides a critical experimental validation for the viability of silicon-based quantum processors.
