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Unconventional resistive switching behavior in ferroelectric tunnel junctions

H J Mao1, C Song, L R Xiao

  • 1School of Materials Science and Engineering, Central South University, Changsha 410083, China.

Physical Chemistry Chemical Physics : PCCP
|March 20, 2015
PubMed
Summary

We explored resistive switching in La0.67Sr0.33MnO3/BaTiO3/metal ferroelectric tunnel junctions. Oxygen vacancy migration and interface effects drive unique self-rectifying behavior, bridging FTJs and memory devices.

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