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Third-Order Nonlinear Hall Effect in Altermagnet RuO_{2}.

R Y Chu1, L Han1, Z H Gong2

  • 1Tsinghua University, Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Beijing 100084, China.

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|December 5, 2025
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Researchers discovered a third-order nonlinear Hall effect (TNHE) in ruthenium dioxide thin films. This novel transport phenomenon serves as a unique fingerprint for identifying altermagnets, offering new avenues for material science exploration.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Altermagnets represent a new class of magnetic materials with unique properties.
  • Identifying altermagnets is crucial but challenging due to the lack of universal distinguishing features.
  • Existing methods like the anomalous Hall effect are limited by symmetry constraints.

Purpose of the Study:

  • To experimentally discover and characterize a new transport phenomenon in altermagnets.
  • To identify a reliable fingerprint for detecting altermagnetic materials.
  • To explore the underlying mechanisms of the observed effect.

Main Methods:

  • Thin film deposition of RuO2.
  • Electrical transport measurements under specific current directions ([110] and [1\[over\]10]).
  • Temperature-dependent measurements and scaling law analysis.

Main Results:

  • Experimental discovery of the third-order nonlinear Hall effect (TNHE) in RuO2 thin films.
  • TNHE observed along specific crystal directions due to symmetry breaking.
  • Twofold angular dependence of TNHE confirmed.
  • Third-order skew scattering identified as the dominant mechanism.

Conclusions:

  • TNHE is established as a distinct transport fingerprint for the altermagnet RuO2.
  • The findings can be extended to identify other altermagnets like V2X2O and MnTe.
  • This discovery opens new possibilities for altermagnet research and applications.