Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.9K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.9K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

857
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
857
Switching of BJT01:22

Switching of BJT

1.0K
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
1.0K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
Voltaic/Galvanic Cells02:47

Voltaic/Galvanic Cells

70.1K
Spontaneous Chemical Reactions
Spontaneous redox reactions occur abundantly in nature. The chemical reaction occurring in a disposable AA battery powering our remote controls is one such example of a spontaneous redox reaction. Another example is the immersion of coiled copper wire into an aqueous silver nitrate solution. The reaction shows a gradual, visually impressive color change from colorless to bright blue and the formation of a grey precipitate on the copper wire. In this experiment,...
70.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Reversibly Stacked Monolithic 3D Integrated Circuits.

Nature communications·2026
Same author

Neutron-Multiplicity Measurement in Muon Capture on Oxygen Nuclei in the Gadolinium-Loaded Super-Kamiokande Detector.

Physical review letters·2026
Same author

Challenging Spontaneous Quantum Collapse with the XENONnT Dark Matter Detector.

Physical review letters·2026
Same author

Electrostatically tunable moiré-mediated Wigner states via interfacial potential engineering in 2D van der Waals heterostructures.

Nature communications·2026
Same author

Bismuth Confinement: A Strategy for Low Resistance and Good Thermal Endurance of Integrated Contacts to MoS<sub>2</sub>.

ACS nano·2026
Same author

Gate-Dielectric Engineering with an Ultrathin Silicon Oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories.

Nano letters·2026

Related Experiment Video

Updated: Apr 15, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

12.6K

Switching mechanism in two-terminal vanadium dioxide devices.

Iuliana P Radu1, B Govoreanu, S Mertens

  • 1IMEC, Kapeldreef 75, Leuven, Belgium. Department of Physics, KU Leuven, Celestijnenlaan 200D, Leuven, Belgium.

Nanotechnology
|March 28, 2015
PubMed
Summary

Vanadium dioxide (VO2) nano-devices exhibit a rapid resistance drop due to Joule heating, a mechanism confirmed by size and temperature studies. These durable devices show over 10^10 switching cycles, indicating promise for nanoelectronics.

More Related Videos

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.5K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Related Experiment Videos

Last Updated: Apr 15, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

12.6K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.5K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Thin film vanadium dioxide (VO2) devices demonstrate a sharp resistance decrease above a threshold, known as a field-induced metal-insulator transition.
  • Understanding the switching mechanism and device scalability is crucial for potential nanoelectronic applications.

Purpose of the Study:

  • To investigate the dependence of dc switching voltage and current on device size and temperature in nano-scale VO2 devices.
  • To elucidate the underlying switching mechanism and assess the operational stability of VO2 for nanoelectronic applications.

Main Methods:

  • Fabrication of two-terminal nano-scale VO2 devices with electrode separations down to 100 nm.
  • Characterization of dc switching properties (voltage and current) as a function of device dimensions and temperature.
  • Pulsed electrical measurements to determine switching times.

Main Results:

  • Switching behavior is consistent with a Joule heating mechanism, with observed dependencies on device size and temperature.
  • Pulsed measurements reveal switching times to the high-resistance state on the order of 100 nanoseconds, correlating with heat dissipation.
  • Despite the Joule heating mechanism, VO2 devices exhibit remarkable endurance, exceeding 10^10 switching cycles.

Conclusions:

  • Joule heating is the dominant mechanism responsible for the metal-insulator transition in nano-scale VO2 devices.
  • The high cycle count demonstrates the robustness and potential of VO2 as a material for durable nanoelectronic devices.
  • VO2's unique switching properties and stability make it a promising candidate for future nanoelectronic applications.