Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
Field Effect Transistor01:29

Field Effect Transistor

1.8K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.8K
MOSFET01:16

MOSFET

1.8K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.8K
Semiconductors01:22

Semiconductors

2.0K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
2.0K
MOS Capacitor01:25

MOS Capacitor

1.9K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.9K
Characteristics of MOSFET01:17

Characteristics of MOSFET

1.4K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Cyclophane-based shielding strategy for singly dispersed graphene nanoribbons.

Nature chemistry·2026
Same author

Efficient and accurate tiller counting of hand-collected samples using images of straw bundles.

MethodsX·2026
Same author

Optimized Synthesis and Device Integration of Long 17-Atom-Wide Armchair Graphene Nanoribbons.

ACS nano·2025
Same author

A dephasing sweet spot with enhanced dipolar coupling.

Communications physics·2025
Same author

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films.

ACS applied electronic materials·2025
Same author

Large Tunable Kinetic Inductance in a Twisted Graphene Superconductor.

Physical review letters·2025

Related Experiment Video

Updated: Apr 15, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

852

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

Sara Rigante1, Paolo Scarbolo2, Mathias Wipf3

  • 1†Nanoelectronic Devices Laboratory, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.

ACS Nano
|March 31, 2015
PubMed
Summary

Field-Effect Transistors (FETs) using FinFET architecture offer a new path for sensitive, stable, and reproducible pH and ion sensing. This CMOS-compatible approach achieves near-Nernst limit sensitivity, outperforming traditional sensors.

Keywords:
Fin field-effect transistor sensorFinFETISFEThigh-k dielectriclong-term stabilitylow powerpH sensingsensing integrated circuits

More Related Videos

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

11.7K
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

12.3K

Related Experiment Videos

Last Updated: Apr 15, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

852
Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

11.7K
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

12.3K

Area of Science:

  • Materials Science and Engineering
  • Electrical Engineering
  • Nanotechnology

Background:

  • Field-Effect Transistors (FETs) are established sensing technologies.
  • High-performance multigate FETs (e.g., FinFETs) offer new opportunities for integrated sensors.
  • Existing sensors often use silicon nanowires on silicon-on-insulator, prompting investigation of alternatives.

Purpose of the Study:

  • To propose and validate FinFETs fabricated on bulk silicon for pH and ion sensing.
  • To provide analytical insight into sensor sensitivity for electronic integration.
  • To offer a CMOS-compatible alternative to silicon nanowire sensors.

Main Methods:

  • Fabrication of n-channel fully depleted FinFETs with 20 nm critical dimensions and HfO2 high-k gate insulator using a CMOS-compatible approach.
  • Characterization of electrical properties, including subthreshold swing (SS) and on-to-off current ratio (Ion/Ioff).
  • Validation of FinFETs as pH sensors, measuring intrinsic sensitivity (S) and output current response (Sout).
  • Long-term stability measurements and finite element analysis simulations.

Main Results:

  • FinFETs exhibit excellent electrical properties: SS ≈ 70 mV/dec and Ion/Ioff ≈ 10^6 at room temperature.
  • The FinFET architecture demonstrates high sensitivity (S = 57 mV/pH, near Nernst limit) and stability (drift δVth/δt = 0.10 mV/h).
  • Achieved pH response in output current of Sout = 60% and validated simulation capabilities.

Conclusions:

  • CMOS-compatible FinFETs fabricated on bulk silicon are a viable and high-performance alternative for pH and ion sensing.
  • The developed sensors offer excellent sensitivity, stability, and reproducibility.
  • The study provides a foundation for advanced sensor design and optimization using simulation tools.