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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Fermi Level Dynamics01:12

Fermi Level Dynamics

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The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
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Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Fermi Level01:18

Fermi Level

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The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Related Experiment Video

Updated: Apr 15, 2026

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
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Surface plasmon polaritons at linearly graded semiconductor interfaces.

D Blazek, M Cada, J Pistora

    Optics Express
    |April 4, 2015
    PubMed
    Summary

    New research reveals that a transition layer (TL) in doped semiconductors supports unique surface plasmon polariton (SPP) dispersion curves. These curves enable control over SPP modes, offering potential for novel optical device applications.

    Area of Science:

    • Physics
    • Materials Science
    • Electrical Engineering

    Background:

    • Surface plasmon polaritons (SPPs) are crucial for optical devices.
    • Understanding SPP behavior at semiconductor interfaces is key for advanced photonics.
    • Inhomogeneous doping in semiconductors presents unique challenges and opportunities for SPP manipulation.

    Purpose of the Study:

    • To investigate the dispersion curves of SPPs at an inhomogenously doped semiconductor/dielectric interface.
    • To analyze the impact of a transition layer (TL) with varying carrier concentration on SPP propagation.
    • To explore the characteristics of SPP modes, including group velocity, within the TL.

    Main Methods:

    • Theoretical investigation of dispersion curves for SPPs.
    • Modeling the doped semiconductor with frequency-dependent permittivity varying with depth.

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  • Analysis of a transition layer with a linear change in carrier concentration.
  • Examination of the asymptotic behavior of dispersion curves in the shortwave limit.

    • Main Results:

    • A transition layer (TL) supports a single-branch dispersion curve irrespective of its thickness.
    • Dispersion curves exhibit a maximum at a finite frequency dependent on TL thickness, then approach zero frequency.
    • Two SPP modes emerge at a given frequency: a long-wave mode (positive group velocity) and a short-wave mode (negative group velocity).
    • Zero group velocity is achievable by tuning the TL parameters.
    • The conventional dispersion relation for SPPs at a zero-thickness TL is an asymptotic solution, with point-wise convergence observed.

    Conclusions:

    • The study elucidates the complex dispersion characteristics of SPPs at inhomogeneously doped semiconductor interfaces.
    • The presence of a transition layer significantly influences SPP mode behavior and group velocity.
    • Findings suggest tunable control over SPP modes, paving the way for novel optoelectronic devices and metamaterials.