Design optimization of single and double layer Graphene phase modulators in SOI

Area of Science:

• Photonics and optoelectronics
• Materials science
• Electrical engineering

Background:

• Silicon photonics is a key technology for optical communication and computing.
• Existing modulators face limitations in performance, such as V(π)L and insertion loss.
• Graphene offers unique electro-optical properties for advanced photonic devices.

Purpose of the Study:

• To design and theoretically evaluate a graphene-based electro-refractive modulator on silicon waveguides.
• To optimize device parameters for enhanced modulation efficiency and reduced losses.
• To demonstrate the potential of graphene-silicon modulators to surpass current state-of-the-art devices.

Main Methods:

• Fabrication of single and double-layer graphene on silicon waveguides.
• Electrical biasing of graphene to its transparency condition.
• Detailed characterization of electrical and optical properties.
• Optimization of geometrical parameters for device performance.

Main Results:

• Achieved phase modulation with negligible amplitude modulation by biasing graphene to transparency.
• Theoretically demonstrated superior performance compared to existing modulators in terms of V(π)L.
• Attained low insertion losses, with figures of merit as low as 8.5 and 2dB∙V for single and double-layer devices, respectively.

Conclusions:

• Graphene-silicon electro-refractive modulators offer a promising pathway to high-performance photonic devices.
• The proposed designs show potential for significant improvements in V(π)L and insertion loss.
• Further research and development could lead to practical applications in optical communication and computing.