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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

Chao Shen, Tien Khee Ng, Boon S Ooi

    Optics Express
    |April 4, 2015
    PubMed
    Summary

    We developed a novel method to engineer indium gallium nitride/gallium nitride quantum wells (InGaN/GaN QWs) for improved light-emitting diodes (LEDs). This technique reduces efficiency droop and enables monolithic integration of photonic devices.

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