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Updated: Apr 15, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Solution-mediated selective nanosoldering of carbon nanotube junctions for improved device performance
Jae-Won Do, Noel N Chang, David Estrada1
1⊥Department of Materials Science and Engineering, Boise State University, Boise, Idaho 83725, United States.
Abstract:
As-grown randomly aligned networks of carbon nanotubes (CNTs) invariably suffer from limited transport properties due to high resistance at the crossed junctions between CNTs. In this work, Joule heating of the highly resistive CNT junctions is carried out in the presence of a spin-coated layer of a suitable chemical precursor. The heating triggers thermal decomposition of the chemical precursor, tris(dibenzylideneacetone)dipalladium (Pd2(dba)3), and causes local deposition of Pd nanoparticles at the CNT junctions, thereby improving the on/off current ratio and mobility of CNT network devices by an average factor of ∼6. This process can be conducted either in air or under vacuum depending on the characteristics of the precursor species. The solution-mediated nanosoldering process is simple, fast, scalable with manufacturing techniques, and extendable to the nanodeposition of a wide variety of materials.

