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Updated: Apr 15, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

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Landau level spectroscopy of electron-electron interactions in graphene

C Faugeras1, S Berciaud2, P Leszczynski1

  • 1Laboratoire National des Champs Magnétiques Intenses, CNRS, (UJF, UPS, INSA), BP 166, 38042 Grenoble, Cedex 9, France.

Physical Review Letters
|April 11, 2015
PubMed

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