Related Experiment Video
Updated: Apr 15, 2026

10:54
Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
15.4K
Plasmonic Hot Electron Induced Photocurrent Response at MoS2-Metal Junctions
Tu Hong1, Bhim Chamlagain2, Shuren Hu3
1†Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37212, United States.
ACS Nano
|April 15, 2015
Summary
Photocurrent in MoS2-metal junctions depends on light polarization and energy. Above the bandgap, photocurrent peaks with parallel polarization; below, it peaks with perpendicular polarization due to plasmonic effects.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Few-layer molybdenum disulfide (MoS2) is a prominent two-dimensional material with unique electronic and optical properties.
- Metal-semiconductor junctions are fundamental building blocks in various optoelectronic devices.
- Understanding photocurrent generation mechanisms is crucial for advancing 2D material-based electronics.
Purpose of the Study:
- To investigate the wavelength- and polarization-dependence of photocurrent in few-layer MoS2-metal junctions.
- To elucidate the underlying mechanisms responsible for observed photocurrent responses.
- To explore the role of surface plasmon resonances in photocurrent generation.
Main Methods:
- Spatially resolved photocurrent measurements were employed.
- Experiments were conducted using varying incident light wavelengths and polarizations.
- Analysis focused on photocurrent signal dependence on light polarization relative to metal electrode edges.
Main Results:
- Above the direct bandgap of MoS2, photocurrent maximized with light polarization parallel to the metal electrode edge, indicating photovoltaic effects.
- Below the bandgap, photocurrent maximized with light polarization perpendicular to the electrode edge, suggesting different generation mechanisms.
- Polarized photocurrent response was linked to polarized light absorption by plasmonic metal electrodes and subsequent hot electron-hole pair injection.
Conclusions:
- Photocurrent generation in MoS2-metal junctions exhibits distinct wavelength and polarization dependencies.
- Surface plasmon resonances in metal electrodes significantly influence photocurrent generation, especially below the bandgap.
- These findings provide insights for engineering 2D material optoelectronics utilizing plasmonic effects.
Related Concept Videos
Metal-Semiconductor Junctions
1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Biasing of Metal-Semiconductor Junctions
857
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
857
MOSFET: Enhancement Mode
1.0K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.0K
MOSFET
1.8K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
1.8K

