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Updated: Apr 13, 2026

Performing In Situ Closed-Cell Gas Reactions in the Transmission Electron Microscope
Published on: July 24, 2021
Electrochemical vapor deposition of semiconductors from gas phase with a solid membrane cell
Sung Ki Cho1, Fu-Ren F Fan1, Allen J Bard1
1Center for Electrochemistry, Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712, United States.
Abstract:
We demonstrate the feasibility of semiconductor deposition via the electrochemical reduction of gaseous precursors by the use of an anhydrous proton-conducting membrane, the solid acid CsHSO4, at 165 °C. This membrane electrode assembly was operated within the oxidation of hydrogen on a porous Pt anode and the deposition of Si or Ge under bias at the cathode from chloride-based gaseous precursors; SiCl4 and GeCl4 in an Ar flow with a reduction potential over -1.0 V (vs RHE).
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