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Related Concept Videos

Semiconductors01:22

Semiconductors

2.0K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
2.0K
Types of Semiconductors01:20

Types of Semiconductors

1.9K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Fermi Level Dynamics01:12

Fermi Level Dynamics

1.0K
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
1.0K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Energy Bands in Solids01:01

Energy Bands in Solids

2.5K
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
2.5K
The Pauli Exclusion Principle03:06

The Pauli Exclusion Principle

62.0K
The arrangement of electrons in the orbitals of an atom is called its electron configuration. We describe an electron configuration with a symbol that contains three pieces of information:
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Single quantum emitters in monolayer semiconductors.

Yu-Ming He1, Genevieve Clark2, John R Schaibley3

  • 11] Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, China [2] CAS Centre for Excellence and Synergetic Innovation Centre in Quantum Information and Quantum Physics, Hefei, Anhui 230026, China.

Nature Nanotechnology
|May 5, 2015
PubMed
Summary
This summary is machine-generated.

Researchers developed new single quantum emitters (SQEs) using 2D tungsten diselenide (WSe2) monolayers. These emitters offer improved performance for quantum optics and quantum information technologies.

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Area of Science:

  • Quantum Optics
  • Materials Science
  • Condensed Matter Physics

Background:

  • Single quantum emitters (SQEs) are crucial for quantum optics and photonic quantum-information technologies.
  • Existing solid-state single-photon sources are limited to 1D or 3D materials.

Purpose of the Study:

  • To introduce a new class of SQEs utilizing defects in 2D tungsten diselenide (WSe2) monolayers.
  • To characterize the optical and magneto-optical properties of these novel SQEs.

Main Methods:

  • Fabrication and optical characterization of WSe2 monolayer defects.
  • Second-order correlation measurements to confirm single-photon emission.
  • Magneto-optical measurements to determine exciton properties.

Main Results:

  • Demonstrated SQEs based on defect-localized excitons in WSe2 monolayers.
  • Observed narrow emission linewidths (∼130 μeV) and strong photon antibunching.
  • Identified fine structure attributed to coupled excitonic eigenmodes and measured a large exciton g factor (∼8.7).

Conclusions:

  • Established a new class of SQEs in 2D quantum materials.
  • These SQEs exhibit superior properties compared to delocalized excitons.
  • Potential for practical advantages in quantum information processing due to integratability and scalability.