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Updated: Apr 13, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Single quantum emitters in monolayer semiconductors
Yu-Ming He1, Genevieve Clark2, John R Schaibley3
11] Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, China [2] CAS Centre for Excellence and Synergetic Innovation Centre in Quantum Information and Quantum Physics, Hefei, Anhui 230026, China.
Abstract:
Single quantum emitters (SQEs) are at the heart of quantum optics and photonic quantum-information technologies. To date, all the demonstrated solid-state single-photon sources are confined to one-dimensional (1D; ref. 3) or 3D materials. Here, we report a new class of SQEs based on excitons that are spatially localized by defects in 2D tungsten-diselenide (WSe2) monolayers. The optical emission from these SQEs shows narrow linewidths of ∼130 μeV, about two orders of magnitude smaller than those of delocalized valley excitons. Second-order correlation measurements revealed a strong photon antibunching, which unambiguously established the single-photon nature of the emission. The SQE emission shows two non-degenerate transitions, which are cross-linearly polarized. We assign this fine structure to two excitonic eigenmodes whose degeneracy is lifted by a large ∼0.71 meV coupling, probably because of the electron-hole exchange interaction in the presence of anisotropy. Magneto-optical measurements also reveal an exciton g factor of ∼8.7, several times larger than those of delocalized valley excitons. In addition to their fundamental importance, establishing new SQEs in 2D quantum materials could give rise to practical advantages in quantum-information processing, such as an efficient photon extraction and a high integratability and scalability.
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