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Updated: Apr 12, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
7.6 W 1342 nm passively mode-locked picosecond composite Nd:YVO4/YVO4 laser with a semiconductor saturable absorber
Abstract:
A high average power 1342 nm passively CW mode-locked picoseconds (ps) composite Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The oscillator cavity was carefully designed to optimize the laser beam radii in the crystal and on the SESAM. The combination of composite bonded laser crystal, direct pumping, and dual end-pumped configuration was adopted to reduce the thermal effect and produce high output power with high beam quality. A maximum average output power of 7.63 W was obtained with a repetition rate of 77 MHz and a pulse duration of 24.2 ps under an absorbed pump power of 38.6 W, corresponding to an optical-optical efficiency of 19.7% and a slope efficiency of 25.9%, respectively. The beam quality factor M(2) was measured to be 1.49.
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