Fabrication of nanometer electrodes by electro migration on an embedded metal pattern

Electrodes with several tens nanometer gap are very important parts in the nano devices such as SETs (Single Electron Transistor), and quantum dots. However, fabricating nanometer electrode with the EBL (Electron Beam Lithography) process is too costly and time consuming to be commercially feasible. To overcome these disadvantages and to enable mass production, nano imprint lithography is applied to a master fabrication technique via EBL. In this paper, several tens nanometer gap electrodes are fabricated by EBL in order to characterize SET. The embedded metal pattern is made by the NIL (Nanoimprint Lithography) process, which is suggested for mass production. In order to fabricate without chemical process, the embedded metal process was executed with nanoimprint lithography. And the nanometer gap was made by electro migration process on flexible film substrate. That is, the electro migration process was executed on the embedded metal pattern to fabricate the nano gapped electrodes.