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Thermal compression chip interconnection using organic solderability preservative etched substrate by plasma

Sung-Won Cho, JoonYoung Choi, Chin-Wook Chung

    Journal of Nanoscience and Nanotechnology
    |May 15, 2015
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    Summary

    Plasma etching enhances copper organic solderability preservative (CuOSP) finished substrates for improved TC interconnections. This process removes OSP material, preventing oxidation and increasing semiconductor packaging yield.

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    Area of Science:

    • Materials Science
    • Surface Engineering
    • Semiconductor Manufacturing

    Background:

    • Copper organic solderability preservative (CuOSP) is crucial for substrate protection.
    • Improving the solderability of CuOSP finished substrates is essential for reliable TC interconnections.
    • Existing methods may not sufficiently enhance solderability or can introduce complications.

    Purpose of the Study:

    • To enhance the solderability of CuOSP finished substrates using plasma etching.
    • To investigate the effects of Oxygen-Hydrogen plasma treatment on OSP material.
    • To optimize the TC interconnection process for improved semiconductor packaging yield.

    Main Methods:

    • Utilized Oxygen-Hydrogen plasma treatment to remove OSP material.
    • Implemented a hydrogen reducing process to prevent oxidation post-treatment.
    • Measured OSP thickness via optical reflection and analyzed composition with Auger Electron Spectroscopy.
    • Conducted electrical open/short tests after semiconductor packaging assembly.

    Main Results:

    • Plasma etching effectively removed OSP material, reducing its thickness.
    • A decrease in OSP thickness correlated with a reduction in TC interconnection bonding force.
    • The plasma etching process led to an improved yield in completed semiconductor packaging.
    • The combined Oxygen-Hydrogen plasma treatment and hydrogen reducing process proved effective in preparing CuOSP substrates.

    Conclusions:

    • Plasma etching is a viable method for enhancing CuOSP substrate solderability for TC interconnections.
    • The process successfully removes OSP while mitigating oxidation risks.
    • Optimized plasma treatment contributes to higher yields in semiconductor packaging assembly.