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Related Concept Videos

P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Biasing of P-N Junction

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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Amorphous silicon p-i-n structure acting as light and temperature sensor.

Giampiero de Cesare1, Augusto Nascetti2, Domenico Caputo3

  • 1Department of Information Engineering, Electronics and Telecommunications, "La Sapienza" University of Rome, via Eudossiana 18, 00184 Rome, Italy. decesare@diet.uniroma1.it.

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|May 29, 2015
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Summary

This study introduces a novel amorphous silicon sensor for simultaneous temperature and radiation measurement, enhancing Lab-on-Chip integration. The device demonstrates high sensitivity and minimal cross-interference, paving the way for miniaturized analytical systems.

Keywords:
Lab-on-Chipamorphous silicon devicesphotosensorstemperature sensors

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Area of Science:

  • Materials Science
  • Sensor Technology
  • Microfluidics

Background:

  • Lab-on-Chip (LOC) devices require integrated sensors for multiple parameters.
  • Miniaturization and high integration levels are crucial for advanced LOC applications.
  • Simultaneous measurement of temperature and radiation intensity is needed for precise control in LOC systems.

Purpose of the Study:

  • To develop and characterize a multi-parametric sensor for simultaneous temperature and radiation intensity measurement.
  • To assess the sensor's suitability for Lab-on-Chip applications, focusing on integration and miniaturization.
  • To evaluate the cross-interference effects between temperature and radiation measurements.

Main Methods:

  • Fabrication of a p-doped/intrinsic/n-doped amorphous silicon thin film junction.
  • Independent characterization of the device as a radiation sensor (responsivity) and temperature sensor (sensitivity).
  • Investigation of cross-sensitivity: temperature effects on light intensity measurement and vice-versa.

Main Results:

  • Maximum responsivity of 350 mA/W at 510 nm for radiation sensing.
  • Temperature sensitivity of 3.2 mV/K.
  • Minimal error (<0.55 pW/K) in light intensity measurement due to temperature variations (short circuit).
  • Minimal error (<1 K/µW) in temperature measurement due to light intensity variations (forward bias > 25 µA/cm²).

Conclusions:

  • The developed amorphous silicon sensor effectively measures both temperature and radiation intensity.
  • The sensor exhibits low cross-interference, making it suitable for integrated LOC systems.
  • The device's performance supports increased integration and miniaturization in microfluidic and analytical devices.