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Phonon-assisted gain in a semiconductor double quantum dot maser
M J Gullans1,2, Y-Y Liu3, J Stehlik3
1Joint Quantum Institute, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Physical Review Letters
|May 30, 2015
Summary
We developed a microscopic model for a double-quantum-dot maser. Our findings reveal that phonon-assisted gain significantly contributes to the device's overall performance, explaining its masing behavior.
Area of Science:
- Quantum physics
- Solid-state devices
- Masers
Background:
- Double-quantum-dot masers are a recent technological advancement.
- Understanding the gain mechanisms in these devices is crucial for their development.
Purpose of the Study:
- To develop a microscopic model for the double-quantum-dot maser.
- To characterize the gain contributions within the device.
Main Methods:
- Development of a microscopic theoretical model.
- Analysis of stimulated emission processes.
- Inclusion of phonon-assisted transitions (phonon sideband).
Main Results:
- Identified simultaneous photon and phonon emission as a significant gain contributor.
- Demonstrated that phonon-assisted gain typically dominates the overall gain.
- The model successfully explains the masing phenomenon.
Conclusions:
- Phonon-assisted emission is a key factor in double-quantum-dot maser operation.
- The developed microscopic model accurately predicts experimental observations.
- This work provides insights into optimizing maser performance.
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