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Remote p-type Doping in GaSb/InAs Core-shell Nanowires.

Feng Ning¹, Li-Ming Tang¹, Yong Zhang¹

¹Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China.

Scientific Reports

|June 2, 2015

Summary

This summary is machine-generated.

Remote p-type doping in GaSb/InAs core-shell nanowires enhances hole density and mobility. The orientation of the nanowire

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Area of Science:

Semiconductor physics
Materials science
Nanotechnology

Background:

Gallium antimonide (GaSb) and indium arsenide (InAs) are crucial semiconductors.
Achieving efficient p-type doping in nanowires is challenging.
Remote doping offers a potential solution for controlled carrier concentration.

Purpose of the Study:

Investigate remote p-type doping in GaSb/InAs core-shell nanowires.
Understand the influence of doping on electronic properties.
Identify key factors for efficient remote doping.

Main Methods:

First-principles calculations.
Density Functional Theory (DFT).
Analysis of electronic band structure and carrier concentration.

Main Results:

Zinc-doped InAs shell effectively donates holes to the GaSb core.
High hole density and mobility achieved in [111] oriented nanowires.
Surface states can compensate hole states in [110] oriented nanowires.

Conclusions:

Remote p-type doping is feasible and beneficial for GaSb/InAs nanowires.
Nanowire orientation is critical for efficient remote doping.
This method offers a pathway for advanced semiconductor devices.